A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs

Keyphrases

• Drain Current 100%
• Hot Electrons 100%
• NMOSFET 100%
• Circuit Degradation 100%
• Electron Damage 100%
• Circuit-based 50%
• Analytical Model 50%
• Operation Mode 50%
• ID Model 50%
• Device Parameters 50%
• Model Equation 50%
• Berkeley 50%
• Reliability Tools 50%
• Circuit Parameters 50%
• Implementation Scheme 50%
• Asymmetrical Voltage 50%
• Forward Mode 50%
• Electron Induced 50%
• Reverse Mode 50%
• Voltage Controlled Current Source 50%

Engineering

• Current Drain 100%
• Hot Electron 100%
• Induced Change 50%
• Simulation Result 50%
• Analytical Model 50%
• Physical Basis 50%
• Circuit Parameter 50%
• Detailed Evaluation 50%
• Controlled Current Source 50%