A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs

Khandker N. Quader, Chester Li, Robert Tu, Elyse Rosenbaum, Ping Ko, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors present a novel approach for modeling hot-electron-induced change in drain current for both forward and reverse modes of operation. The change in drain current, Delta ID, is implemented as an asymmetrical voltage-controlled current source. The authors first present the physical basis of the model and derive the analytical model equations. the implementation scheme for the analytical Delta ID model in the BERT (Berkeley Reliability Tool) simulator and a detailed evaluation of the model as a function of different device and circuit parameters are also given. Simulation results of unidirectional and bidirectional circuits based on the new model are presented.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - Jan 1 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period12/8/9112/11/91

Fingerprint

Hot electrons
hot electrons
degradation
damage
Degradation
Networks (circuits)
Drain current
simulation
Analytical models
Simulators
simulators
Electric potential
evaluation
electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Quader, K. N., Li, C., Tu, R., Rosenbaum, E., Ko, P., & Hu, C. (1991). A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 337-340). [235384] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235384

A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. / Quader, Khandker N.; Li, Chester; Tu, Robert; Rosenbaum, Elyse; Ko, Ping; Hu, Chenming.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 337-340 235384 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Quader, KN, Li, C, Tu, R, Rosenbaum, E, Ko, P & Hu, C 1991, A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. in International Electron Devices Meeting 1991, IEDM 1991., 235384, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235384
Quader KN, Li C, Tu R, Rosenbaum E, Ko P, Hu C. A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 337-340. 235384. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1991.235384
Quader, Khandker N. ; Li, Chester ; Tu, Robert ; Rosenbaum, Elyse ; Ko, Ping ; Hu, Chenming. / A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 337-340 (Technical Digest - International Electron Devices Meeting, IEDM).
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