@inproceedings{94a63b8f445146be9957d0a2e278e0db,
title = "A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs",
abstract = "The authors present a novel approach for modeling hot-electron-induced change in drain current for both forward and reverse modes of operation. The change in drain current, Delta ID, is implemented as an asymmetrical voltage-controlled current source. The authors first present the physical basis of the model and derive the analytical model equations. the implementation scheme for the analytical Delta ID model in the BERT (Berkeley Reliability Tool) simulator and a detailed evaluation of the model as a function of different device and circuit parameters are also given. Simulation results of unidirectional and bidirectional circuits based on the new model are presented.",
author = "Quader, {Khandker N.} and Chester Li and Robert Tu and Elyse Rosenbaum and Ping Ko and Chenming Hu",
note = "Publisher Copyright: {\textcopyright} 1991 IEEE.; International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",
year = "1991",
doi = "10.1109/IEDM.1991.235384",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "337--340",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
address = "United States",
}