Abstract
In this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation.
Original language | English (US) |
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Article number | 062109 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 6 |
DOIs | |
State | Published - Aug 5 2013 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)