A multi-scale modeling of junctionless field-effect transistors

Chiyung Yam, Jie Peng, Quan Chen, Stanislav Markov, Jun Z. Huang, Ngai Wong, Weng Cho Chew, Guanhua Chen

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation.

Original languageEnglish (US)
Article number062109
JournalApplied Physics Letters
Volume103
Issue number6
DOIs
StatePublished - Aug 5 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'A multi-scale modeling of junctionless field-effect transistors'. Together they form a unique fingerprint.

Cite this