A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation

Xiaochuan Bi; Jack R. East; Umberto Ravaioli; George I. Haddad

doi:10.1016/j.sse.2007.10.035

A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation

Xiaochuan Bi, Jack R. East, Umberto Ravaioli, George I. Haddad

Research output: Contribution to journal › Article › peer-review

Abstract

This paper analyzes the design tradeoffs between Si and SiGe MITATT diodes using a Monte Carlo method. The narrow bandgap material Si_0.7Ge_0.3 improves the charge confinement in the avalanche generation region and therefore increases the RF power generation efficiency. A SiGe MITATT diode operating at 200 GHz can produce 42 mW of RF power which is 63% higher than that from a Si MITATT diode. Beyond 300 GHz, the superior thermal properties of Si allow the Si MITATT diode to be driven at higher DC power level. Therefore, 2.3 mW can be generated from the Si MITATT diode at 400 GHz but only 1.5 mW from the SiGe MITATT diode.

Original language	English (US)
Pages (from-to)	688-694
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.10.035
State	Published - May 2008

Keywords

Full band Monte Carlo simulation
Heterostructure
Terahertz frequency
Transit-time diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2007.10.035

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title = "A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation",

abstract = "This paper analyzes the design tradeoffs between Si and SiGe MITATT diodes using a Monte Carlo method. The narrow bandgap material Si0.7Ge0.3 improves the charge confinement in the avalanche generation region and therefore increases the RF power generation efficiency. A SiGe MITATT diode operating at 200 GHz can produce 42 mW of RF power which is 63% higher than that from a Si MITATT diode. Beyond 300 GHz, the superior thermal properties of Si allow the Si MITATT diode to be driven at higher DC power level. Therefore, 2.3 mW can be generated from the Si MITATT diode at 400 GHz but only 1.5 mW from the SiGe MITATT diode.",

keywords = "Full band Monte Carlo simulation, Heterostructure, Terahertz frequency, Transit-time diode",

author = "Xiaochuan Bi and East, {Jack R.} and Umberto Ravaioli and Haddad, {George I.}",

note = "Funding Information: This work was supported by ARO under the MURI Program Number DAAD-19-01-1-0622. The authors would like to acknowledge the NSF Network for Computational Nanotechnology for the Monte Carlo codes. We also wish to acknowledge Prof. Jasprit Singh for useful discussions on the SiGe impact ionization modeling. ",

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doi = "10.1016/j.sse.2007.10.035",

language = "English (US)",

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journal = "Solid-State Electronics",

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publisher = "Elsevier Ltd",

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T1 - A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation

AU - Bi, Xiaochuan

AU - East, Jack R.

AU - Ravaioli, Umberto

AU - Haddad, George I.

N1 - Funding Information: This work was supported by ARO under the MURI Program Number DAAD-19-01-1-0622. The authors would like to acknowledge the NSF Network for Computational Nanotechnology for the Monte Carlo codes. We also wish to acknowledge Prof. Jasprit Singh for useful discussions on the SiGe impact ionization modeling.

PY - 2008/5

Y1 - 2008/5

N2 - This paper analyzes the design tradeoffs between Si and SiGe MITATT diodes using a Monte Carlo method. The narrow bandgap material Si0.7Ge0.3 improves the charge confinement in the avalanche generation region and therefore increases the RF power generation efficiency. A SiGe MITATT diode operating at 200 GHz can produce 42 mW of RF power which is 63% higher than that from a Si MITATT diode. Beyond 300 GHz, the superior thermal properties of Si allow the Si MITATT diode to be driven at higher DC power level. Therefore, 2.3 mW can be generated from the Si MITATT diode at 400 GHz but only 1.5 mW from the SiGe MITATT diode.

AB - This paper analyzes the design tradeoffs between Si and SiGe MITATT diodes using a Monte Carlo method. The narrow bandgap material Si0.7Ge0.3 improves the charge confinement in the avalanche generation region and therefore increases the RF power generation efficiency. A SiGe MITATT diode operating at 200 GHz can produce 42 mW of RF power which is 63% higher than that from a Si MITATT diode. Beyond 300 GHz, the superior thermal properties of Si allow the Si MITATT diode to be driven at higher DC power level. Therefore, 2.3 mW can be generated from the Si MITATT diode at 400 GHz but only 1.5 mW from the SiGe MITATT diode.

KW - Full band Monte Carlo simulation

KW - Heterostructure

KW - Terahertz frequency

KW - Transit-time diode

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

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A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation

Abstract

Keywords

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