A molybdenum disulfide piezoelectric strain gauge

Adam M. Hurst, Daniel Chenet, Arend Van Der Zande, Ioannis Kymissis, James Hone

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 μϵ (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.

Original languageEnglish (US)
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781467381550
StatePublished - 2015
Externally publishedYes
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: Jul 27 2015Jul 30 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology


Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015


  • Molybdenum disulfide
  • dynamic strain gauge
  • piezoelectricity
  • strain
  • tuning fork

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films


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