@inproceedings{dd9c72e073ef4003b24d68a3cfa8599b,
title = "A molybdenum disulfide piezoelectric strain gauge",
abstract = "This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 μϵ (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.",
keywords = "Molybdenum disulfide, dynamic strain gauge, piezoelectricity, strain, tuning fork",
author = "Hurst, {Adam M.} and Daniel Chenet and {Van Der Zande}, Arend and Ioannis Kymissis and James Hone",
year = "2015",
doi = "10.1109/NANO.2015.7388821",
language = "English (US)",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1122--1125",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
note = "15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",
}