Abstract
This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 μϵ (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1122-1125 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781467381550 |
| DOIs | |
| State | Published - Jan 1 2015 |
| Event | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: Jul 27 2015 → Jul 30 2015 |
Publication series
| Name | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
|---|
Other
| Other | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 |
|---|---|
| Country | Italy |
| City | Rome |
| Period | 7/27/15 → 7/30/15 |
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Keywords
- Molybdenum disulfide
- dynamic strain gauge
- piezoelectricity
- strain
- tuning fork
ASJC Scopus subject areas
- Process Chemistry and Technology
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cite this
A molybdenum disulfide piezoelectric strain gauge. / Hurst, Adam M.; Chenet, Daniel; Van Der Zande, Arend; Kymissis, Ioannis; Hone, James.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1122-1125 7388821 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A molybdenum disulfide piezoelectric strain gauge
AU - Hurst, Adam M.
AU - Chenet, Daniel
AU - Van Der Zande, Arend
AU - Kymissis, Ioannis
AU - Hone, James
PY - 2015/1/1
Y1 - 2015/1/1
N2 - This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 μϵ (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.
AB - This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 μϵ (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.
KW - Molybdenum disulfide
KW - dynamic strain gauge
KW - piezoelectricity
KW - strain
KW - tuning fork
UR - http://www.scopus.com/inward/record.url?scp=84964389652&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964389652&partnerID=8YFLogxK
U2 - 10.1109/NANO.2015.7388821
DO - 10.1109/NANO.2015.7388821
M3 - Conference contribution
AN - SCOPUS:84964389652
T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology
SP - 1122
EP - 1125
BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology
PB - Institute of Electrical and Electronics Engineers Inc.
ER -