A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects

Andrew A. Ketterson; Jong Wook Seo; Minh H. Tong; Kari L. Nummila; James J. Morikuni; Keh Yung Cheng; Sung Mo Kang; Ilesanmi Adesida

doi:10.1109/16.223699

A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects

Andrew A. Ketterson, Jong Wook Seo, Minh H. Tong, Kari L. Nummila, James J. Morikuni, Keh Yung Cheng, Sung Mo Kang, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The design, fabrication. and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFET’s) and metal-semiconductor-metal (MSM) photodectectors. High-performance quarter-micrometer MODFET’s withf₁’s of -∼70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero dc offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon nitride passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured. These are the highest bandwidths yet reported for any monolithic OEIC receiver.

Original language	English (US)
Pages (from-to)	1406-1416
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/16.223699
State	Published - Aug 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.223699

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title = "A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects",

abstract = "The design, fabrication. and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFET{\textquoteright}s) and metal-semiconductor-metal (MSM) photodectectors. High-performance quarter-micrometer MODFET{\textquoteright}s withf1{\textquoteright}s of -∼70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero dc offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon nitride passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured. These are the highest bandwidths yet reported for any monolithic OEIC receiver.",

author = "Ketterson, {Andrew A.} and Seo, {Jong Wook} and Tong, {Minh H.} and Nummila, {Kari L.} and Morikuni, {James J.} and Cheng, {Keh Yung} and Kang, {Sung Mo} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received November 2, 1992; revised Februaly 11, 1993. This work was supported by the National Science Foundation under Grant ECD 89-43166. M. H. Tong was an IBM Resident Study Program Fellow. The review of this paper was arranged by Associate Editor J. Xu.",

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AU - Morikuni, James J.

AU - Cheng, Keh Yung

AU - Kang, Sung Mo

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received November 2, 1992; revised Februaly 11, 1993. This work was supported by the National Science Foundation under Grant ECD 89-43166. M. H. Tong was an IBM Resident Study Program Fellow. The review of this paper was arranged by Associate Editor J. Xu.

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N2 - The design, fabrication. and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFET’s) and metal-semiconductor-metal (MSM) photodectectors. High-performance quarter-micrometer MODFET’s withf1’s of -∼70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero dc offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon nitride passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured. These are the highest bandwidths yet reported for any monolithic OEIC receiver.

AB - The design, fabrication. and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFET’s) and metal-semiconductor-metal (MSM) photodectectors. High-performance quarter-micrometer MODFET’s withf1’s of -∼70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero dc offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon nitride passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured. These are the highest bandwidths yet reported for any monolithic OEIC receiver.

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A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects

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