A method for quantifying annihilation rates of bulk point defects at surfaces

Charlotte T.M. Kwok, Kapil Dev, Richard D. Braatz, E. G. Seebauer

Research output: Contribution to journalArticle

Abstract

Point defects such as vacancies and interstitial atoms serve as primary mediators of solid-state diffusion in many materials. In some cases, the defects encounter surfaces where annihilation can occur. Quantification of annihilation rates presents formidable challenges, since point defect concentrations are typically low and therefore difficult to monitor directly. The present work develops a method for such quantification based upon measurements of diffusional profile spreading of a foreign species, using as an example isotopically labeled silicon implanted into a silicon matrix. Optimal experimental design techniques together with maximum-likelihood estimation indicate that the loss probability for Si interstitials on nitrogen-covered Si(100) lies at 7.1× 10-4.

Original languageEnglish (US)
Article number013524
JournalJournal of Applied Physics
Volume98
Issue number1
DOIs
StatePublished - Jul 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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