A Low-Noise GaAs MESFET Made with Graded-Channel Doping Profiles

M. Feng, V. K. Eu, C. M.L. Yee, T. Zielinski

Research output: Contribution to journalArticlepeer-review

Abstract

We have demonstrated that devices fabricated from epitaxially grown material with a graded-channel doping profile are capable of improved microwave performance. For operation at 12 GHz, graded-channel doping profile devices have an associated gain that is always 1 dB higher at the minimum noise-figure point compared to ion-implanted Gaussian-channel doping profile devices. A noise figure of 1.60 dB with 11-dB associated gain has been obtained at 12 GHz for 0.5-μm × 300-μm gate devices. A tranconductance of 200 mS/mm for this device has been achieved.

Original languageEnglish (US)
Pages (from-to)85-87
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number3
DOIs
StatePublished - Mar 1984
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A Low-Noise GaAs MESFET Made with Graded-Channel Doping Profiles'. Together they form a unique fingerprint.

Cite this