We have demonstrated that devices fabricated from epitaxially grown material with a graded-channel doping profile are capable of improved microwave performance. For operation at 12 GHz, graded-channel doping profile devices have an associated gain that is always 1 dB higher at the minimum noise-figure point compared to ion-implanted Gaussian-channel doping profile devices. A noise figure of 1.60 dB with 11-dB associated gain has been obtained at 12 GHz for 0.5-μm × 300-μm gate devices. A tranconductance of 200 mS/mm for this device has been achieved.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering