A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen; Vipan Kumar; Randal S. Schwindt; Ilesanmi Adesida

doi:10.1109/TMTT.2006.877047

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, Vipan Kumar, Randal S. Schwindt, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

Original language	English (US)
Article number	1650433
Pages (from-to)	2949-2952
Number of pages	4
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	54
Issue number	7
DOIs	https://doi.org/10.1109/TMTT.2006.877047
State	Published - Jul 2006
Externally published	Yes

Keywords

Gallium-nitride (GaN) high electron-mobility transistor (HEMT)
Small-signal modeling

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/TMTT.2006.877047

Library availability

Discover UIUC Full Text

Cite this

@article{a37dd9ba0f374d86b49226c514613412,

title = "A low gate bias model extraction technique for AlGaN/GaN HEMTs",

abstract = "The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.",

keywords = "Gallium-nitride (GaN) high electron-mobility transistor (HEMT), Small-signal modeling",

author = "Guang Chen and Vipan Kumar and Schwindt, {Randal S.} and Ilesanmi Adesida",

year = "2006",

month = jul,

doi = "10.1109/TMTT.2006.877047",

language = "English (US)",

volume = "54",

pages = "2949--2952",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - A low gate bias model extraction technique for AlGaN/GaN HEMTs

AU - Chen, Guang

AU - Kumar, Vipan

AU - Schwindt, Randal S.

AU - Adesida, Ilesanmi

PY - 2006/7

Y1 - 2006/7

N2 - The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

AB - The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

KW - Gallium-nitride (GaN) high electron-mobility transistor (HEMT)

KW - Small-signal modeling

UR - http://www.scopus.com/inward/record.url?scp=33746453817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746453817&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2006.877047

DO - 10.1109/TMTT.2006.877047

M3 - Article

AN - SCOPUS:33746453817

SN - 0018-9480

VL - 54

SP - 2949

EP - 2952

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 7

M1 - 1650433

ER -

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this