A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, Vipan Kumar, Randal S. Schwindt, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

Original languageEnglish (US)
Article number1650433
Pages (from-to)2949-2952
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2006

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Keywords

  • Gallium-nitride (GaN) high electron-mobility transistor (HEMT)
  • Small-signal modeling

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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