A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate

Chi Kuan Lin, Hao Chung Kuo, Gong Ru Lin, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51<x<1) buffered GaAs substrate is demonstrated with dark current, responsivity, noise-equipment power, and bandwidth of 13 pA, 0.77 A/W, 6.9́10-11 W/Hz0.5, and 7.5 GHz, respectively.

Original languageEnglish (US)
Title of host publicationOptical Fiber Communication Conference, OFC 2006
PublisherOptical Society of America
ISBN (Print)1557528020, 9781557528025
StatePublished - Jan 1 2006
EventOptical Fiber Communication Conference, OFC 2006 - Anaheim, CA, United States
Duration: Mar 5 2006Mar 5 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherOptical Fiber Communication Conference, OFC 2006
CountryUnited States
CityAnaheim, CA
Period3/5/063/5/06

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Lin, C. K., Kuo, H. C., Lin, G. R., & Feng, M. (2006). A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate. In Optical Fiber Communication Conference, OFC 2006 (Optics InfoBase Conference Papers). Optical Society of America.