A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate

Chi Kuan Lin, Hao Chung Kuo, Gong Ru Lin, M. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51<x<1) buffered GaAs substrate is demonstrated with dark current, responsivity, noise-equipment power, and bandwidth of 13 pA, 0.77 A/W, 6.9́10-11 W/Hz0.5, and 7.5 GHz, respectively.

Original languageEnglish (US)
Title of host publicationOptical Fiber Communication Conference, OFC 2005
PublisherOptical Society of America
ISBN (Print)1557527849, 9781557527844
StatePublished - Jan 1 2005
EventOptical Fiber Communication Conference, OFC 2005 - Anaheim, CA, United States
Duration: Mar 6 2005Mar 6 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherOptical Fiber Communication Conference, OFC 2005
Country/TerritoryUnited States
CityAnaheim, CA
Period3/6/053/6/05

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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