A laterally tunable quantum dot transistor

H. Chang, R. Grundbacher, D. Jovanovic, J. P. Leburton, I. Adesida

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Abstract

A laterally tunable quantum dot transistor has been fabricated on a modulation-doped AlGaAs/GaAs heterostructure. The transistor consists of a singly gated quantum wire in which a quantum dot region is locally formed beneath the gate under the influence of an applied potential. Quantum confinement in this device is realized through structural and electrostatic means. The discrete energy levels in the quantum dot are tunable using the single gate control and the transport path is through a 1D-0D-1D constriction in the device. Reproducible resonant conductance peaks resulting from resonant transmission of electrons through zero-dimensional states from and to adjacent quantum wires are observed at 4.2 K.

Original languageEnglish (US)
Pages (from-to)3209-3211
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number5
DOIs
StatePublished - Dec 1 1994

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chang, H., Grundbacher, R., Jovanovic, D., Leburton, J. P., & Adesida, I. (1994). A laterally tunable quantum dot transistor. Journal of Applied Physics, 76(5), 3209-3211. https://doi.org/10.1063/1.357510