A hybrid experimental/numerical approach to characterize interfacial adhesion in multilayer low-κ thin film specimens

Rajesh Kitey; Nancy R. Sottos; Philippe H. Geubelle

doi:10.1016/j.tsf.2010.07.094

A hybrid experimental/numerical approach to characterize interfacial adhesion in multilayer low-κ thin film specimens

Rajesh Kitey, Nancy R. Sottos, Philippe H. Geubelle

Research output: Contribution to journal › Article › peer-review

Abstract

The strength of multilayer low dielectric (low-κ) constant organo-silicate glass (OSG) and silicon-carbon-nitride (SiCN) thin film interfaces is characterized by a laser spallation technique. Two specimen sets with different OSG/SiCN stacking sequences are evaluated. The effect of helium (He) pretreatment is also investigated. The stress at the low-κ interface is enhanced through the use of a fused silica backing layer to shape the incident pulse and the addition of a thin gold (Au) top layer to increase inertial force during the dynamic failure event. The weakest interface in the multilayer stack (first to fail) is identified through optical images, profilometry and scanning electron microscope images of the spallation zone. The strength of the failed interface is inferred from the incident stress history in combination with a one dimensional dynamic wave propagation analysis. The adhesion strength of the OSG/SiCN interface (372 MPa) is 32% larger than that of Si/OSG (282 MPa) for specimens with no He pretreatement. The interfacial strength of both interfaces is significantly increased by a He pretreatment, making failure by spallation difficult.

Original language	English (US)
Pages (from-to)	337-344
Number of pages	8
Journal	Thin Solid Films
Volume	519
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2010.07.094
State	Published - Oct 29 2010

Keywords

Decompression shock
Dynamic wave propagation
Laser spallation
Low-κ
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Metals and Alloys
Surfaces, Coatings and Films
Surfaces and Interfaces

Online availability

10.1016/j.tsf.2010.07.094

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title = "A hybrid experimental/numerical approach to characterize interfacial adhesion in multilayer low-κ thin film specimens",

abstract = "The strength of multilayer low dielectric (low-κ) constant organo-silicate glass (OSG) and silicon-carbon-nitride (SiCN) thin film interfaces is characterized by a laser spallation technique. Two specimen sets with different OSG/SiCN stacking sequences are evaluated. The effect of helium (He) pretreatment is also investigated. The stress at the low-κ interface is enhanced through the use of a fused silica backing layer to shape the incident pulse and the addition of a thin gold (Au) top layer to increase inertial force during the dynamic failure event. The weakest interface in the multilayer stack (first to fail) is identified through optical images, profilometry and scanning electron microscope images of the spallation zone. The strength of the failed interface is inferred from the incident stress history in combination with a one dimensional dynamic wave propagation analysis. The adhesion strength of the OSG/SiCN interface (372 MPa) is 32% larger than that of Si/OSG (282 MPa) for specimens with no He pretreatement. The interfacial strength of both interfaces is significantly increased by a He pretreatment, making failure by spallation difficult.",

keywords = "Decompression shock, Dynamic wave propagation, Laser spallation, Low-κ, Thin film",

author = "Rajesh Kitey and Sottos, {Nancy R.} and Geubelle, {Philippe H.}",

note = "Funding Information: The authors gratefully acknowledge financial support of the National Science Foundation (NSF) under Grant (CMMI 0726742 ) and materials supplied by Texas Instruments. Experiments were carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy. ",

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AU - Geubelle, Philippe H.

N1 - Funding Information: The authors gratefully acknowledge financial support of the National Science Foundation (NSF) under Grant (CMMI 0726742 ) and materials supplied by Texas Instruments. Experiments were carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy.

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AB - The strength of multilayer low dielectric (low-κ) constant organo-silicate glass (OSG) and silicon-carbon-nitride (SiCN) thin film interfaces is characterized by a laser spallation technique. Two specimen sets with different OSG/SiCN stacking sequences are evaluated. The effect of helium (He) pretreatment is also investigated. The stress at the low-κ interface is enhanced through the use of a fused silica backing layer to shape the incident pulse and the addition of a thin gold (Au) top layer to increase inertial force during the dynamic failure event. The weakest interface in the multilayer stack (first to fail) is identified through optical images, profilometry and scanning electron microscope images of the spallation zone. The strength of the failed interface is inferred from the incident stress history in combination with a one dimensional dynamic wave propagation analysis. The adhesion strength of the OSG/SiCN interface (372 MPa) is 32% larger than that of Si/OSG (282 MPa) for specimens with no He pretreatement. The interfacial strength of both interfaces is significantly increased by a He pretreatment, making failure by spallation difficult.

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A hybrid experimental/numerical approach to characterize interfacial adhesion in multilayer low-κ thin film specimens

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