A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI Technology

Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean Jacques Hajjar, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a high voltage tolerant (HVT) supply clamp for ESD protection, in which the current drive of the clamp during an ESD event is maximized without compromising reliability during normal operation. Similar to prior HVT clamps, ESD current shunting is provided by 3 cascoded NFETs but the novel trigger circuit optimizes the gate bias. The design is implemented in a 45-nm SOI CMOS technology and the clamp devices are sized for a 2-kV HBM protection level. As evidenced by TLP and VFTLP measurements, the new clamp offers 50% reduction of on-resistance and 0.6 V lower turn-on voltage, relative to the prior art.

Original languageEnglish (US)
Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5C31-5C36
ISBN (Electronic)9781665479509
DOIs
StatePublished - 2022
Externally publishedYes
Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
Duration: Mar 27 2022Mar 31 2022

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2022-March
ISSN (Print)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
Country/TerritoryUnited States
CityDallas
Period3/27/223/31/22

Keywords

  • CMOS
  • Supply clamp
  • electrostatic discharge

ASJC Scopus subject areas

  • General Engineering

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