Abstract
A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87 × 10-5 A/cm-2 at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 131 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.
Original language | English (US) |
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Pages (from-to) | 1388-1390 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 9 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1997 |
Externally published | Yes |
Keywords
- Indium materials/devices
- Photodetectors
- Photodiodes
- Schottky diodes
- Semiconductor radiation detectors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering