A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector

W. A. Wohlmuth; J. W. Seo; P. Fay; C. Caneau; I. Adesida

doi:10.1109/68.623272

A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87 × 10^-5 A/cm^-2 at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 131 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.

Original language	English (US)
Pages (from-to)	1388-1390
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	10
DOIs	https://doi.org/10.1109/68.623272
State	Published - Oct 1997
Externally published	Yes

Keywords

Indium materials/devices
Photodetectors
Photodiodes
Schottky diodes
Semiconductor radiation detectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.623272

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title = "A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector",

abstract = "A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87 × 10-5 A/cm-2 at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 131 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.",

keywords = "Indium materials/devices, Photodetectors, Photodiodes, Schottky diodes, Semiconductor radiation detectors",

author = "Wohlmuth, {W. A.} and Seo, {J. W.} and P. Fay and C. Caneau and I. Adesida",

note = "Funding Information: Manuscript received January 17, 1997; revised July 7, 1997. This work was supported by the Advanced Research Projects Agency under Grant MDA 972-941-0004 and by the National Science Foundation under Grant ECD 89-43166. W. A. Wohlmuth is with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556 USA. P. Fay, and I. Adesida are with the Microelectronics Laboratory and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 USA. J.-W. Seo is with the School of Electronic and Electrical Engineering, Hong-ik University, Mapo-ku, Seoul 121-791, Korea. C. Caneau is with Bell Communication Research, Red Bank, NJ 07701 USA. Publisher Item Identifier S 1041-1135(97)07176-0.",

year = "1997",

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doi = "10.1109/68.623272",

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AU - Seo, J. W.

AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

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N2 - A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87 × 10-5 A/cm-2 at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 131 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.

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A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector

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Keywords

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