A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver

Andrew A. Ketterson; Minh Tong; Jong Wook Seo; Kari Nummila; James J. Morikuni; Sung Mo Kang; Ilesanmi Adesida

doi:10.1109/68.124881

A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver

Andrew A. Ketterson, Minh Tong, Jong Wook Seo, Kari Nummila, James J. Morikuni, Sung Mo Kang, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with f_t's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 Ω are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-Ω are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3 μm finger spacing of the large 100 × 100 μm² MSM.

Original language	English (US)
Pages (from-to)	73-76
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/68.124881
State	Published - Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.124881

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@article{6d74bece9e5340518efcaa8bf6b8aa83,

title = "A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver",

abstract = "A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with ft's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 Ω are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-Ω are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3 μm finger spacing of the large 100 × 100 μm2 MSM.",

author = "Ketterson, {Andrew A.} and Minh Tong and Seo, {Jong Wook} and Kari Nummila and Morikuni, {James J.} and Kang, {Sung Mo} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received September 17, 1991; revised October 31, 1991. This work was supported by the National Science Foundation Grant ECD 89-43166. M. Tong is an IBM Resident Study Program Fellow. The authors are with the Center for Compound Semiconductor Microelectronics and the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9105434.",

year = "1992",

month = jan,

doi = "10.1109/68.124881",

language = "English (US)",

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pages = "73--76",

journal = "IEEE Photonics Technology Letters",

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AU - Ketterson, Andrew A.

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AU - Seo, Jong Wook

AU - Nummila, Kari

AU - Morikuni, James J.

AU - Kang, Sung Mo

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received September 17, 1991; revised October 31, 1991. This work was supported by the National Science Foundation Grant ECD 89-43166. M. Tong is an IBM Resident Study Program Fellow. The authors are with the Center for Compound Semiconductor Microelectronics and the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9105434.

PY - 1992/1

Y1 - 1992/1

N2 - A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with ft's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 Ω are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-Ω are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3 μm finger spacing of the large 100 × 100 μm2 MSM.

AB - A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with ft's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 Ω are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-Ω are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3 μm finger spacing of the large 100 × 100 μm2 MSM.

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A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver

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