A GaAs Integrated Hall Sensor/Amplifier

T. R. Lepkowski; G. Shade; S. P. Kwok; Milton Feng; Lawrence E. Dickens; D. L. Laude; B. Schoendube

doi:10.1109/EDL.1986.26352

A GaAs Integrated Hall Sensor/Amplifier

T. R. Lepkowski
, G. Shade
, S. P. Kwok
, Milton Feng
, Lawrence E. Dickens
, D. L. Laude
, B. Schoendube

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integrated into a three-terminal device. Yields of 34 percent have been demonstrated for magnetic thresholds of + / – 450 G or less. Circuits are operable between – 30 and + 200°C.

Original language	English (US)
Pages (from-to)	222-224
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/EDL.1986.26352
State	Published - Apr 1986
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1986.26352

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Cite this

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title = "A GaAs Integrated Hall Sensor/Amplifier",

abstract = "GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integrated into a three-terminal device. Yields of 34 percent have been demonstrated for magnetic thresholds of + / – 450 G or less. Circuits are operable between – 30 and + 200°C.",

author = "Lepkowski, \{T. R.\} and G. Shade and Kwok, \{S. P.\} and Milton Feng and Dickens, \{Lawrence E.\} and Laude, \{D. L.\} and B. Schoendube",

year = "1986",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Lepkowski, T. R.

AU - Shade, G.

AU - Kwok, S. P.

AU - Feng, Milton

AU - Dickens, Lawrence E.

AU - Laude, D. L.

AU - Schoendube, B.

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AB - GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integrated into a three-terminal device. Yields of 34 percent have been demonstrated for magnetic thresholds of + / – 450 G or less. Circuits are operable between – 30 and + 200°C.

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DO - 10.1109/EDL.1986.26352

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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A GaAs Integrated Hall Sensor/Amplifier

Abstract

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