A GaAs Integrated Hall Sensor/Amplifier

T. R. Lepkowski, G. Shade, S. P. Kwok, Milton Feng, Lawrence E. Dickens, D. L. Laude, B. Schoendube

Research output: Contribution to journalArticle

Abstract

GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integrated into a three-terminal device. Yields of 34 percent have been demonstrated for magnetic thresholds of + / – 450 G or less. Circuits are operable between – 30 and + 200°C.

Original languageEnglish (US)
Pages (from-to)222-224
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number4
DOIs
StatePublished - Apr 1986
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Lepkowski, T. R., Shade, G., Kwok, S. P., Feng, M., Dickens, L. E., Laude, D. L., & Schoendube, B. (1986). A GaAs Integrated Hall Sensor/Amplifier. IEEE Electron Device Letters, 7(4), 222-224. https://doi.org/10.1109/EDL.1986.26352