A GaAs Integrated Hall Sensor/Amplifier

T. R. Lepkowski, G. Shade, S. P. Kwok, Milton Feng, Lawrence E. Dickens, D. L. Laude, B. Schoendube

Research output: Contribution to journalArticle

Abstract

GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integrated into a three-terminal device. Yields of 34 percent have been demonstrated for magnetic thresholds of + / – 450 G or less. Circuits are operable between – 30 and + 200°C.

Original languageEnglish (US)
Pages (from-to)222-224
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number4
DOIs
StatePublished - Apr 1986
Externally publishedYes

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Transistor transistor logic circuits
Buffers
Networks (circuits)
Sensors
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lepkowski, T. R., Shade, G., Kwok, S. P., Feng, M., Dickens, L. E., Laude, D. L., & Schoendube, B. (1986). A GaAs Integrated Hall Sensor/Amplifier. IEEE Electron Device Letters, 7(4), 222-224. https://doi.org/10.1109/EDL.1986.26352

A GaAs Integrated Hall Sensor/Amplifier. / Lepkowski, T. R.; Shade, G.; Kwok, S. P.; Feng, Milton; Dickens, Lawrence E.; Laude, D. L.; Schoendube, B.

In: IEEE Electron Device Letters, Vol. 7, No. 4, 04.1986, p. 222-224.

Research output: Contribution to journalArticle

Lepkowski, TR, Shade, G, Kwok, SP, Feng, M, Dickens, LE, Laude, DL & Schoendube, B 1986, 'A GaAs Integrated Hall Sensor/Amplifier', IEEE Electron Device Letters, vol. 7, no. 4, pp. 222-224. https://doi.org/10.1109/EDL.1986.26352
Lepkowski TR, Shade G, Kwok SP, Feng M, Dickens LE, Laude DL et al. A GaAs Integrated Hall Sensor/Amplifier. IEEE Electron Device Letters. 1986 Apr;7(4):222-224. https://doi.org/10.1109/EDL.1986.26352
Lepkowski, T. R. ; Shade, G. ; Kwok, S. P. ; Feng, Milton ; Dickens, Lawrence E. ; Laude, D. L. ; Schoendube, B. / A GaAs Integrated Hall Sensor/Amplifier. In: IEEE Electron Device Letters. 1986 ; Vol. 7, No. 4. pp. 222-224.
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