Abstract
The object of this work is the development of a semiconductor sandwich neutron spectrometer composed of a 6LiF converter placed between two 4H-SiC Schottky diodes. In particular, the diodes construction, alpha detection characterization and preliminary neutron radiation damage tests are described, in order to evaluate the capability of the detector to work in harsh environments characterized by high neutron fluence rate. A theoretical determination of the optimal converter thickness and an analysis of the detection efficiency of the spectrometer at different neutron energies are performed with Monte Carlo simulations.
Original language | English (US) |
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Pages (from-to) | 1634-1637 |
Number of pages | 4 |
Journal | Radiation Measurements |
Volume | 46 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2011 |
Externally published | Yes |
Keywords
- Neutron spectrometry
- Semiconductor detectors
- Silicon carbide
ASJC Scopus subject areas
- Radiation
- Instrumentation