Abstract
A new dual-base triggered SCR is presented. By adjusting the device sizings in the trigger circuit, the designer sets the trigger voltage to an application-appropriate value. The turn-on time is comparable to that of DTSCRs fabricated in the same technology node, but the leakage is orders of magnitude lower.
Original language | English (US) |
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Article number | 4772140 |
Pages (from-to) | 242-248 |
Number of pages | 7 |
Journal | Electrical Overstress/Electrostatic Discharge Symposium Proceedings |
State | Published - 2008 |
Event | 2008 30th Annual on Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2008 - Tucson, AZ, United States Duration: Sep 7 2008 → Sep 12 2008 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering