A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorous-doped Si device

Farzad Tehranchi, Jean-Pierre Leburton, Aaron Thean

Research output: Contribution to journalArticle

Abstract

In this paper, we investigate a scheme for the control of the hyperfine interaction between a conduction electron and a P impurity nuclear spin in a symmetric metal-oxide-semiconductor structure with face-to-face gate oxide layers. We solve Poisson's equation for the device electronics and Schrödinger's equation for the quantum states in the silicon layer by taking into account the effective mass anisotropy around each of the six degenerate minima in the silicon conduction band. We show that the double gate device provides better performances, in terms of better wave function amplitude modulation and consequently higher nuclear magnetic resonance frequency than in single gate devices for relatively short impurity distances from the oxide layers.

Original languageEnglish (US)
Article number126106
JournalJournal of Applied Physics
Volume100
Issue number12
DOIs
StatePublished - Dec 1 2006

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metal oxide semiconductors
modulation
impurities
oxides
interactions
silicon
Poisson equation
nuclear spin
conduction electrons
conduction bands
wave functions
nuclear magnetic resonance
anisotropy
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorous-doped Si device. / Tehranchi, Farzad; Leburton, Jean-Pierre; Thean, Aaron.

In: Journal of Applied Physics, Vol. 100, No. 12, 126106, 01.12.2006.

Research output: Contribution to journalArticle

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