In this paper, we investigate a scheme for the control of the hyperfine interaction between a conduction electron and a P impurity nuclear spin in a symmetric metal-oxide-semiconductor structure with face-to-face gate oxide layers. We solve Poisson's equation for the device electronics and Schrödinger's equation for the quantum states in the silicon layer by taking into account the effective mass anisotropy around each of the six degenerate minima in the silicon conduction band. We show that the double gate device provides better performances, in terms of better wave function amplitude modulation and consequently higher nuclear magnetic resonance frequency than in single gate devices for relatively short impurity distances from the oxide layers.
ASJC Scopus subject areas
- Physics and Astronomy(all)