A distributive-transconductance model for border traps in III-V/high-k MOS capacitors

Chen Zhang; Min Xu; Peide D. Ye; Xiuling Li

doi:10.1109/LED.2013.2255256

A distributive-transconductance model for border traps in III-V/high-k MOS capacitors

Chen Zhang, Min Xu, Peide D. Ye, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

By in-depth analysis of the electrical response of border traps in gate oxide, a new border-trap model is proposed where the ac charging and discharging current associated with those traps is proportional to the variation of the surface potential of semiconductors, resembling the behavior of transconductors. In contrast, the border trap current is directly related to the local potential in the gate oxide in the existing model. The model is then used to provide a qualitative understanding of the temperature-dependent frequency dispersion observed on the Al₂O₃/n-GaAs(111)A MOS capacitors at high positive bias.

Original language	English (US)
Article number	6513297
Pages (from-to)	735-737
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2255256
State	Published - 2013

Keywords

Border trap
III-V
MOS

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Online availability

10.1109/LED.2013.2255256

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abstract = "By in-depth analysis of the electrical response of border traps in gate oxide, a new border-trap model is proposed where the ac charging and discharging current associated with those traps is proportional to the variation of the surface potential of semiconductors, resembling the behavior of transconductors. In contrast, the border trap current is directly related to the local potential in the gate oxide in the existing model. The model is then used to provide a qualitative understanding of the temperature-dependent frequency dispersion observed on the Al2O3/n-GaAs(111)A MOS capacitors at high positive bias.",

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Y1 - 2013

N2 - By in-depth analysis of the electrical response of border traps in gate oxide, a new border-trap model is proposed where the ac charging and discharging current associated with those traps is proportional to the variation of the surface potential of semiconductors, resembling the behavior of transconductors. In contrast, the border trap current is directly related to the local potential in the gate oxide in the existing model. The model is then used to provide a qualitative understanding of the temperature-dependent frequency dispersion observed on the Al2O3/n-GaAs(111)A MOS capacitors at high positive bias.

AB - By in-depth analysis of the electrical response of border traps in gate oxide, a new border-trap model is proposed where the ac charging and discharging current associated with those traps is proportional to the variation of the surface potential of semiconductors, resembling the behavior of transconductors. In contrast, the border trap current is directly related to the local potential in the gate oxide in the existing model. The model is then used to provide a qualitative understanding of the temperature-dependent frequency dispersion observed on the Al2O3/n-GaAs(111)A MOS capacitors at high positive bias.

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A distributive-transconductance model for border traps in III-V/high-k MOS capacitors

Abstract

Keywords

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