@inproceedings{7094a45812a04c5d99a8517895e659cc,
title = "A cryogenic broadband DC contact RF MEMS switch",
abstract = "A dielectric free DC contact RF microelectromechanical systems (MEMS) switch is designed and tested under room temperature and cryogenic temperature. The switch demonstrates a 1 Ω contact resistance and 2 fF up-state capacitance, and thus has an insertion-loss less than 0.4 dB up to 50 GHz and less than 0.9 dB up to 75 GHz at room temperature. The isolation is better than 24 dB up to 50 GHz and 18 dB up to 75 GHz at room temperature. At cryogenic temperature (77.5K), the switch has an insertion-loss less than 0.6 dB with isolation better than 24 dB up to 50 GHz. The effects of cryogenic temperatures on actuation voltage and contact resistance have been noted. The theoretical and experimental results of the switch performance are presented and compared.",
keywords = "Contact resistance, Cryogenic temperature, DC contact, Dielectric free, RF MEMS",
author = "Songbin Gong and Hui Shen and {Scott Barker}, N.",
year = "2009",
doi = "10.1109/MWSYM.2009.5165924",
language = "English (US)",
isbn = "9781424428045",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "1225--1228",
booktitle = "IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest",
note = "2009 IEEE MTT-S International Microwave Symposium, IMS 2009 ; Conference date: 07-06-2009 Through 12-06-2009",
}