A coupled schrödinger/Monte Carlo technique for quantum-corrected device simulation

B. Winstead, Umberto Ravaioli

Research output: Contribution to conferencePaper

Abstract

A model for quantum-corrected full-band Monte Carlo device simulation accounting for quantum repulsion at the silicon/gate-insulator interface through a self-consistent coupling with the Schrodinger equation was presented. The method was applied to a MOS capacitor for a wide range of biases and was compared to self-consistent Schrodinger-Poisson calculations for validation. The quantum concentration slices were regarded in the method as envelope functions for the Monte Carlo solution and the Monte Carlo potential was corrected to reflect their shape. The corrections formulated were not a function of the particular magnitude of the quantum concentration.

Original languageEnglish (US)
Pages169-170
Number of pages2
StatePublished - Jan 1 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Winstead, B., & Ravaioli, U. (2001). A coupled schrödinger/Monte Carlo technique for quantum-corrected device simulation. 169-170. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.