A coupled circuit and device simulator for design of RF MEMS VCOs

M. Behera, S. De, N. Aluru, K. Mayaram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new coupled circuit and electrostatic/mechanical simulator is presented for the design of RF MEMS VCOs. The numerical solution of device level equations is used to accurately compute the capacitance of the MEMS capacitor. This coupled with a circuit simulator facilitates the simulation of circuits incorporating MEMS capacitors. Simulations of a 2.4 GHz VCO implemented in a UP 0.5 μm CMOS technology show good agreement with experimentally observed behavior.

Original languageEnglish (US)
Title of host publication2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
PublisherIEEE Computer Society
Pages347-350
Number of pages4
ISBN (Electronic)0780379764
DOIs
StatePublished - 2003
Event2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States
Duration: Aug 12 2003Aug 14 2003

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume1
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
Country/TerritoryUnited States
CitySan Francisco
Period8/12/038/14/03

Keywords

  • CMOS technology
  • Capacitance
  • Capacitors
  • Circuit simulation
  • Computational modeling
  • Coupling circuits
  • Electrostatics
  • Equations
  • Micromechanical devices
  • Radiofrequency microelectromechanical systems

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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