A contactless photoconductance technique for the identification of impact ionization

D. Westley Miller; Peter Hugger; Jet Meitzner; Charles W. Warren; Angus Rockett; Steve Kevan; J. David Cohen

doi:10.1109/PVSC.2013.6744129

A contactless photoconductance technique for the identification of impact ionization

D. Westley Miller, Peter Hugger, Jet Meitzner, Charles W. Warren, Angus Rockett, Steve Kevan, J. David Cohen

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for hetero-junction assisted impact ionization (HAII) with promising initial results. A strong photo-dielectric effect is also revealed for a ZnS:i-Si interface demonstrating the ability of the technique to characterize results other than the enhanced photoconductivity we seek. Such characterization will help to inform the next step in hetero-junction preparation.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	195-197
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744129
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

Keywords

Impact ionization
Multiple exciton generation
Photoconductance
Photodielectric effect
Si
ZnS

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Online availability

10.1109/PVSC.2013.6744129

Library availability

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Cite this

Miller, D. W., Hugger, P., Meitzner, J., Warren, C. W., Rockett, A., Kevan, S., & David Cohen, J. (2013). A contactless photoconductance technique for the identification of impact ionization. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 195-197). [6744129] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744129

A contactless photoconductance technique for the identification of impact ionization. / Miller, D. Westley; Hugger, Peter; Meitzner, Jet et al.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 195-197 6744129 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miller, DW, Hugger, P, Meitzner, J, Warren, CW, Rockett, A, Kevan, S & David Cohen, J 2013, A contactless photoconductance technique for the identification of impact ionization. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744129, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 195-197, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744129

Miller DW, Hugger P, Meitzner J, Warren CW, Rockett A, Kevan S et al. A contactless photoconductance technique for the identification of impact ionization. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 195-197. 6744129. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744129

@inproceedings{ddd1e6d3d4c54204b84e1722d28fb587,

title = "A contactless photoconductance technique for the identification of impact ionization",

abstract = "A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for hetero-junction assisted impact ionization (HAII) with promising initial results. A strong photo-dielectric effect is also revealed for a ZnS:i-Si interface demonstrating the ability of the technique to characterize results other than the enhanced photoconductivity we seek. Such characterization will help to inform the next step in hetero-junction preparation.",

keywords = "Impact ionization, Multiple exciton generation, Photoconductance, Photodielectric effect, Si, ZnS",

author = "Miller, {D. Westley} and Peter Hugger and Jet Meitzner and Warren, {Charles W.} and Angus Rockett and Steve Kevan and {David Cohen}, J.",

year = "2013",

doi = "10.1109/PVSC.2013.6744129",

language = "English (US)",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "195--197",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

TY - GEN

T1 - A contactless photoconductance technique for the identification of impact ionization

AU - Miller, D. Westley

AU - Hugger, Peter

AU - Meitzner, Jet

AU - Warren, Charles W.

AU - Rockett, Angus

AU - Kevan, Steve

AU - David Cohen, J.

PY - 2013

Y1 - 2013

N2 - A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for hetero-junction assisted impact ionization (HAII) with promising initial results. A strong photo-dielectric effect is also revealed for a ZnS:i-Si interface demonstrating the ability of the technique to characterize results other than the enhanced photoconductivity we seek. Such characterization will help to inform the next step in hetero-junction preparation.

AB - A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for hetero-junction assisted impact ionization (HAII) with promising initial results. A strong photo-dielectric effect is also revealed for a ZnS:i-Si interface demonstrating the ability of the technique to characterize results other than the enhanced photoconductivity we seek. Such characterization will help to inform the next step in hetero-junction preparation.

KW - Impact ionization

KW - Multiple exciton generation

KW - Photoconductance

KW - Photodielectric effect

KW - Si

KW - ZnS

UR - http://www.scopus.com/inward/record.url?scp=84896444609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896444609&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744129

DO - 10.1109/PVSC.2013.6744129

M3 - Conference contribution

AN - SCOPUS:84896444609

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 195

EP - 197

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

A contactless photoconductance technique for the identification of impact ionization

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Keywords

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