A contactless photoconductance technique for the identification of impact ionization

D. Westley Miller, Peter Hugger, Jet Meitzner, Charles W. Warren, Angus Rockett, Steve Kevan, J. David Cohen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for hetero-junction assisted impact ionization (HAII) with promising initial results. A strong photo-dielectric effect is also revealed for a ZnS:i-Si interface demonstrating the ability of the technique to characterize results other than the enhanced photoconductivity we seek. Such characterization will help to inform the next step in hetero-junction preparation.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages195-197
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Impact ionization
  • Multiple exciton generation
  • Photoconductance
  • Photodielectric effect
  • Si
  • ZnS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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