A conjoined electron and thermal transport study of thermal degradation induced during normal operation of multigate transistors

Keyphrases

• Anharmonic Phonons 33%
• Cross-sectional Scaling 33%
• Current Gain 33%
• Dependent Scattering 33%
• Design Rules 33%
• Device Performance 33%
• Double Gate 33%
• Electron Dispersion 33%
• Electron Monte Carlo 33%
• Electron Transport 100%
• Electronic Transport 33%
• Full-band 33%
• Gain-limit 33%
• Gate Length 33%
• Gate-all-around 33%
• Inversion Mode 33%
• Monte Carlo 33%
• Monte Carlo Simulator 66%
• MOSFET 33%
• Multigate Transistor 100%
• Multiple-Gate MOSFETs (MuGFETs) 100%
• Performance Improvement 33%
• Phonon Decay 33%
• Phonon Dispersion 66%
• Phonon Modes 33%
• Phonon Monte Carlo 100%
• Phonons 33%
• Quantum Corrections 33%
• Short Channel Effects 33%
• Silicon-on-insulator 66%
• Spatial Temperature 33%
• Sub-20 Nm 33%
• Temperature Effect 33%
• Temperature Maps 33%
• Thermal Degradation 100%
• Thermal Transport 100%
• Thermoelectric Properties 33%
• Transport Studies 100%
• Tri-gate 33%

Engineering

• Cross Section 75%
• Current Gain 25%
• Design Rule 25%
• Device Performance 25%
• Gate Length 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nanoscale 25%
• Phonon Dispersion 50%
• Quantum Correction 25%
• Silicon on Insulator 50%
• Thermal Degradation 100%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon 50%
• Thermal Degradation 100%
• Transistor 100%