A complementary bipolar technology family with a vertically integrated PNP for high-frequency analog applications

Rashid Bashir, François Heébert, Joseph DeSantis, Joel M. McGregor, Wipawan Yindeepol, Kevin Brown, Farhood Moraveji, Thomas B. Mills, Alexei Sadovnikov, James McGinty, Peter Hopper, Robert Sabsowitz, Mohamed Khidr, Tracey Krakowski, Linda Smith, Reda Razouk

Research output: Contribution to journalArticlepeer-review


Silicon complementary bipolar processes offer the possibility of realizing high-performance circuits for a variety of analog applications. This paper presents a summary of silicon complementary bipolar process technology reported in recent years. Specifically, an overview of a family of silicon complementary bipolar process technologies, called Vertically Integrated PNP (VIPTM1), which have been used for the realization of high-frequency analog circuits is presented. Three process technologies, termed VIP-3, VIP-3H, and VIP-4H offer device breakdowns of 40, 85, and 170 V, respectively. These processes feature optimized vertically integrated bipolar junction transistors (PNPs) along with high performance NPN transistors with polycrystalline silicon emitters, low parasitic polycrystalline silicon resistors, and metal-insulator-polycrystalline silicon capacitors. Key issues and aspects of the processes are described. These issues include the polycrystalline silicon emitter optimization and vertical and lateral device isolation in the transistors. Circuit design examples are also described which have been implemented in these technologies.

Original languageEnglish (US)
Pages (from-to)2525-2534
Number of pages10
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - Nov 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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