@inproceedings{5b177054fcc54e8d8732ca62463f2f53,
title = "A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides",
abstract = "High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.",
keywords = "Annealing, Breakdown voltage, Capacitance-voltage characteristics, Current measurement, Electric breakdown, Frequency dependence, Impact ionization, Monitoring, Stability, Stress",
author = "Liu, {Z. H.} and E. Rosenbaum and Ko, {P. K.} and C. Hu and Cheng, {Y. C.} and Sodini, {C. G.} and Gross, {B. J.} and Ma, {T. P.}",
note = "Publisher Copyright: {\textcopyright} 1991 IEEE.; International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",
year = "1991",
doi = "10.1109/IEDM.1991.235321",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "723--726",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
address = "United States",
}