A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Z. H. Liu, E. Rosenbaum, P. K. Ko, C. Hu, Y. C. Cheng, C. G. Sodini, B. J. Gross, T. P. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages723-726
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - Jan 1 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period12/8/9112/11/91

Fingerprint

endurance
Oxides
Durability
oxides
Electric breakdown
breakdown
trapping
Charge trapping
hardness
examination
direct current
Hardness
Display devices
traps
injection
life (durability)

Keywords

  • Annealing
  • Breakdown voltage
  • Capacitance-voltage characteristics
  • Current measurement
  • Electric breakdown
  • Frequency dependence
  • Impact ionization
  • Monitoring
  • Stability
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C., Cheng, Y. C., Sodini, C. G., ... Ma, T. P. (1991). A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 723-726). [235321] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235321

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. / Liu, Z. H.; Rosenbaum, E.; Ko, P. K.; Hu, C.; Cheng, Y. C.; Sodini, C. G.; Gross, B. J.; Ma, T. P.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 723-726 235321 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, ZH, Rosenbaum, E, Ko, PK, Hu, C, Cheng, YC, Sodini, CG, Gross, BJ & Ma, TP 1991, A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. in International Electron Devices Meeting 1991, IEDM 1991., 235321, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 723-726, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235321
Liu ZH, Rosenbaum E, Ko PK, Hu C, Cheng YC, Sodini CG et al. A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 723-726. 235321. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1991.235321
Liu, Z. H. ; Rosenbaum, E. ; Ko, P. K. ; Hu, C. ; Cheng, Y. C. ; Sodini, C. G. ; Gross, B. J. ; Ma, T. P. / A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 723-726 (Technical Digest - International Electron Devices Meeting, IEDM).
@inproceedings{5b177054fcc54e8d8732ca62463f2f53,
title = "A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides",
abstract = "High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.",
keywords = "Annealing, Breakdown voltage, Capacitance-voltage characteristics, Current measurement, Electric breakdown, Frequency dependence, Impact ionization, Monitoring, Stability, Stress",
author = "Liu, {Z. H.} and E. Rosenbaum and Ko, {P. K.} and C. Hu and Cheng, {Y. C.} and Sodini, {C. G.} and Gross, {B. J.} and Ma, {T. P.}",
year = "1991",
month = "1",
day = "1",
doi = "10.1109/IEDM.1991.235321",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "723--726",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
address = "United States",

}

TY - GEN

T1 - A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

AU - Liu, Z. H.

AU - Rosenbaum, E.

AU - Ko, P. K.

AU - Hu, C.

AU - Cheng, Y. C.

AU - Sodini, C. G.

AU - Gross, B. J.

AU - Ma, T. P.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

AB - High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

KW - Annealing

KW - Breakdown voltage

KW - Capacitance-voltage characteristics

KW - Current measurement

KW - Electric breakdown

KW - Frequency dependence

KW - Impact ionization

KW - Monitoring

KW - Stability

KW - Stress

UR - http://www.scopus.com/inward/record.url?scp=84954136483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954136483&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1991.235321

DO - 10.1109/IEDM.1991.235321

M3 - Conference contribution

AN - SCOPUS:84954136483

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 723

EP - 726

BT - International Electron Devices Meeting 1991, IEDM 1991

PB - Institute of Electrical and Electronics Engineers Inc.

ER -