A comparative study of surface passivation on AlGaN/GaN HEMTs

Keyphrases

• Surface Passivation 100%
• GaN HEMT 100%
• Passivation 100%
• Silicon Nitride 50%
• Gate Length 50%
• Device Performance 50%
• Extrinsic Transconductance 50%
• Passivation Layer 50%
• Gate Leakage Current 50%
• Parasitic Capacitance 50%
• Pinch-off 50%
• Fmax 50%
• Idss 50%
• Minimum Noise Figure 50%
• Layer Effect 50%
• Microwave Noise Measurement 50%
• NFmin 50%

Engineering

• Passivation 100%
• Gate Length 25%
• Device Performance 25%
• Parasitic Capacitance 25%
• Passivation Layer 25%
• Noise Figure 25%
• Measurement Noise 25%

Material Science

• Surface Passivation 100%
• Capacitance 50%
• Silicon Nitride 50%