A comparative study of surface passivation on AlGaN/GaN HEMTs

Physics & Astronomy

• high electron mobility transistors 85%
• passivity 76%
• transconductance 22%
• noise measurement 22%
• leakage 17%
• capacitance 16%
• microwaves 13%
• performance 9%

Chemical Compounds

• Chemical Passivation 83%
• Transconductance 42%
• Leakage Current 36%
• Parasitic 33%
• Microwave 22%

Engineering & Materials Science

• High electron mobility transistors 95%
• Transconductance 24%
• Noise figure 23%
• Leakage currents 22%
• Microwaves 18%
• Capacitance 17%