A comparative study of surface passivation on AlGaN/GaN HEMTs

W. Lu; V. Kumar; R. Schwindt; E. Piner; I. Adesida

doi:10.1016/S0038-1101(02)00089-8

A comparative study of surface passivation on AlGaN/GaN HEMTs

W. Lu, V. Kumar, R. Schwindt, E. Piner, I. Adesida

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Using a Si₃N₄ layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 μm, the I_dss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm. The f_T and f_MAX values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NF_min) after passivation.

Original language	English (US)
Pages (from-to)	1441-1444
Number of pages	4
Journal	Solid-State Electronics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00089-8
State	Published - Sep 2002

Keywords

AlGaN
GaN
HEMT
Minimum noise figure
Passivation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Online availability

10.1016/S0038-1101(02)00089-8

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title = "A comparative study of surface passivation on AlGaN/GaN HEMTs",

abstract = "Using a Si3N4 layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 μm, the Idss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm. The fT and fMAX values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NFmin) after passivation.",

keywords = "AlGaN, GaN, HEMT, Minimum noise figure, Passivation",

author = "W. Lu and V. Kumar and R. Schwindt and E. Piner and I. Adesida",

note = "Funding Information: This work was supported by DARPA Contract DAAD19-99-1-0011 and by ONR as ONR Grant N00014-01-1-1000 and ONR Grant N00014-01-1-1072 (Monitor: Dr. J. Zolper).",

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doi = "10.1016/S0038-1101(02)00089-8",

language = "English (US)",

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T1 - A comparative study of surface passivation on AlGaN/GaN HEMTs

AU - Lu, W.

AU - Kumar, V.

AU - Schwindt, R.

AU - Piner, E.

AU - Adesida, I.

N1 - Funding Information: This work was supported by DARPA Contract DAAD19-99-1-0011 and by ONR as ONR Grant N00014-01-1-1000 and ONR Grant N00014-01-1-1072 (Monitor: Dr. J. Zolper).

PY - 2002/9

Y1 - 2002/9

N2 - Using a Si3N4 layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 μm, the Idss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm. The fT and fMAX values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NFmin) after passivation.

AB - Using a Si3N4 layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 μm, the Idss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm. The fT and fMAX values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NFmin) after passivation.

KW - AlGaN

KW - GaN

KW - HEMT

KW - Minimum noise figure

KW - Passivation

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DO - 10.1016/S0038-1101(02)00089-8

M3 - Article

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SN - 0038-1101

VL - 46

SP - 1441

EP - 1444

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

A comparative study of surface passivation on AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

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