A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes

Jong Wook Seo; Andrew A. Ketterson; Daniel G. Ballegeer; Keh Yung Cheng; Ilesanmi Adesida

doi:10.1109/68.149898

A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes

Jong Wook Seo, Andrew A. Ketterson, Daniel G. Ballegeer, Keh Yung Cheng, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.

Original language	English (US)
Pages (from-to)	888-890
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	8
DOIs	https://doi.org/10.1109/68.149898
State	Published - Aug 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.149898

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title = "A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes",

abstract = "Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM{\textquoteright}s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM{\textquoteright}s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM{\textquoteright}s exhibited a linear optical response over a wider bias range than Ti/Au-MSM{\textquoteright}s. Also, a higher breakdown voltage was measured for ITO-MSM{\textquoteright}s. The bandwidths of ITO and Ti/Au-MSM{\textquoteright}s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM{\textquoteright}s is due to the longer transit time of the carriers generated beneath the ITO electrodes.",

author = "Seo, {Jong Wook} and Ketterson, {Andrew A.} and Ballegeer, {Daniel G.} and Cheng, {Keh Yung} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received March 30, 1992; revised May 27, 1992. This work was supported at the University of Illinois by an Illinois State Technol-ogy Challenge Grant SCCA92-82134 and the National Science Foundation Grant ECD 89-43166. J.-W. Seo, A. A. Ketterson, D. G. Ballegeer, K.-Y. Cheng, and I. Adesida are with the Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. X. Li and T. Gessert are with the National Renewable Energy Laboratory, Golden, CO 80401. IEEE Log Number 9202165.",

year = "1992",

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AU - Ballegeer, Daniel G.

AU - Cheng, Keh Yung

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received March 30, 1992; revised May 27, 1992. This work was supported at the University of Illinois by an Illinois State Technol-ogy Challenge Grant SCCA92-82134 and the National Science Foundation Grant ECD 89-43166. J.-W. Seo, A. A. Ketterson, D. G. Ballegeer, K.-Y. Cheng, and I. Adesida are with the Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. X. Li and T. Gessert are with the National Renewable Energy Laboratory, Golden, CO 80401. IEEE Log Number 9202165.

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N2 - Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.

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A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes

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