A compact W-band CMOS power amplifier with gain boosting and short-circuited stub matching for high power and high efficiency operation

Doris A. Chan, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

Using cascode cell, inductance gain boosting and source degeneration techniques in 90 nm CMOS process, a two-stage power amplifier operating at 80 GHz with a minimum chip area of 0.35 mm2 demonstrates gain of 18 dB, linear output power of 10.8 dBm, saturated power of 13.3 dBm, and PAE greater than 11.8% when the amplifier is biased at Vd = 3 V and Vg = 1 V.

Original languageEnglish (US)
Article number5711403
Pages (from-to)98-100
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume21
Issue number2
DOIs
StatePublished - Feb 2011

Keywords

  • CMOS
  • coplanar waveguide (CPW)
  • millimeter-wave
  • power amplifier (PA)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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