A unified, macroscopic, one-dimensional model is presented for the quantitative description of the process of dielectric charging in radio frequency micro-electromechanical systems (RF MEMS) switches. The fidelity of the model relies on the utilization of experimentally obtained data to assign values to model parameters that capture the nonlinear behavior of the dielectric charging process. The proposed model can be easily cast in the form of a simple simulation program with integrated circuit emphasis (SPICE) circuit. Its compact, physics-based form enables its seamless insertion in nonlinear, SPICE-like, circuit simulators and makes it compatible with system-level MEMS computer-aided analysis and design tools. The model enables the efficient simulation of dielectric charging under different, complex control voltage waveforms. In addition, it provides the means for expedient simulation of the impact of dielectric charging on switch performance degradation.

Original languageEnglish (US)
Pages (from-to)197-203
Number of pages7
JournalInternational Journal of RF and Microwave Computer-Aided Engineering
Issue number2
StatePublished - Mar 1 2009


  • Capacitive switches
  • Dielectric charging
  • System level modeling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications


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