A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications

Karan Bhatia, Sami Hyvonen, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

Two 3.65-mW, ESD-protected, BiCMOS ultra-wideband low-noise amplifiers (LNAs) for operation up to 10 GHz are presented. These common-base LNAs achieve significant savings in die area over more widely used cascoded common-emitter LNAs because they do not use an LC input matching network. A design with a shunt peaked load achieves a high S21 (17-19 dB) and low noise figure (NF) (4-5 dB) across the band. A resistively loaded design exhibits a lower S 22 (15-16 dB) and higher NF (4.5-6 dB), but also utilizes 20% less silicon area. Both LNAs achieve a 1.5 kV ESD protection level and an acceptable S11 (< -10 dB) across the band. Current source noise reduction is critical in common base topologies. Therefore, detailed noise analyses of MOS- and HBT-based current sources are provided.

Original languageEnglish (US)
Pages (from-to)1121-1130
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume42
Issue number5
DOIs
StatePublished - May 1 2007

Fingerprint

Low noise amplifiers
Ultra-wideband (UWB)
Noise figure
Broadband amplifiers
Heterojunction bipolar transistors
Noise abatement
Topology
Silicon

Keywords

  • BiCMOS analog integrated circuits
  • Broadband amplifiers
  • Circuit topology
  • Electrostatic discharges
  • Impedance matching
  • Noise
  • RL circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications. / Bhatia, Karan; Hyvonen, Sami; Rosenbaum, Elyse.

In: IEEE Journal of Solid-State Circuits, Vol. 42, No. 5, 01.05.2007, p. 1121-1130.

Research output: Contribution to journalArticle

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