A broad theoretical approach to the investigation of mesoscopic electron devices

U. Ravaioli, F. Sols, T. Kerkhoven

Research output: Contribution to journalArticle

Abstract

Nanofabrication technology has matured to a point where it is possible to realize mesoscopic semi-conductor structures with dimensions comparable to the phase coherence length of conducting electrons. Devices based on electron wave phenomena, like quantum interference, must be studied using quantum mechanical methods which are very computationally intensive. We have initially applied a tight-binding Green's function formalism to structures modelled as ideal electron wave-guides, looking at issues related to the realization of three-terminal quantum interference devices and to the more general problem of device interconnection. We also report on a highly efficient two-dimensional algorithm implementation for the self-consistent solution of the coupled Poisson and Schrödinger equations, necessary to investigate subband wavefunctions and energy levels in the cross-section of realistic electron waveguide structures, which we plan to incorporate in the approach.

Original languageEnglish (US)
Pages (from-to)1371-1375
Number of pages5
JournalSolid State Electronics
Volume32
Issue number12
DOIs
StatePublished - Dec 1989

Fingerprint

Electron devices
Electrons
Quantum interference devices
electrons
interference
phase coherence
nanofabrication
Wave functions
Poisson equation
Nanotechnology
Green's function
Electron energy levels
Waveguides
Green's functions
conductors
energy levels
formalism
waveguides
conduction
cross sections

Keywords

  • Green's function
  • Mesoscopic systems
  • electron waveguide
  • quantum interference
  • tight-binding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

A broad theoretical approach to the investigation of mesoscopic electron devices. / Ravaioli, U.; Sols, F.; Kerkhoven, T.

In: Solid State Electronics, Vol. 32, No. 12, 12.1989, p. 1371-1375.

Research output: Contribution to journalArticle

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