A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Keyphrases

• Analytical Model 50%
• Asymmetrical Voltage 50%
• Berkeley 50%
• Carrier-induced 100%
• Circuit Degradation 100%
• Circuit Simulation 50%
• Current Reduction 100%
• Drain Current 100%
• Electron Induced 50%
• Hot Carriers 100%
• Hot Electrons 50%
• Implementation Scheme 50%
• Model Equation 50%
• MOSFET Model 50%
• NMOSFET 100%
• Parameter Extraction 50%
• Reduction Model 100%
• Reliability Tools 50%
• Voltage Controlled Current Source 50%

Engineering

• Analytical Model 50%
• Circuit Simulation 50%
• Controlled Current Source 50%
• Current Drain 100%
• Hot Electron 50%
• Induced Change 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Physical Basis 50%
• Reduction Model 100%

Material Science

• Electronic Circuit 100%
• Hot Carrier 100%
• Hot Electron 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Parameter Extraction 33%