A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Khandker N. Quader, Chester C. Li, Robert Tu, Elyse Rosenbaum, Ping K. Ko, Chenming Hu

Research output: Contribution to journalArticle

Abstract

In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

Original languageEnglish (US)
Pages (from-to)2245-2254
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume40
Issue number12
DOIs
StatePublished - Dec 1993
Externally publishedYes

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Hot carriers
Drain current
Degradation
Networks (circuits)
Parameter extraction
Hot electrons
Circuit simulation
Analytical models
Simulators
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation. / Quader, Khandker N.; Li, Chester C.; Tu, Robert; Rosenbaum, Elyse; Ko, Ping K.; Hu, Chenming.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 12, 12.1993, p. 2245-2254.

Research output: Contribution to journalArticle

Quader, Khandker N. ; Li, Chester C. ; Tu, Robert ; Rosenbaum, Elyse ; Ko, Ping K. ; Hu, Chenming. / A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 12. pp. 2245-2254.
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