A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Khandker N. Quader; Chester C. Li; Robert Tu; Elyse Rosenbaum; Ping K. Ko; Chenming Hu

doi:10.1109/16.249472

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Khandker N. Quader, Chester C. Li, Robert Tu, Elyse Rosenbaum, Ping K. Ko, Chenming Hu

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, Δl_D is implemented as an asymmetrical voltage controlled current source and the new Δl_Dmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

Original language	English (US)
Pages (from-to)	2245-2254
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	12
DOIs	https://doi.org/10.1109/16.249472
State	Published - Dec 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.249472

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title = "A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation",

abstract = "In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.",

author = "Quader, {Khandker N.} and Li, {Chester C.} and Robert Tu and Elyse Rosenbaum and Ko, {Ping K.} and Chenming Hu",

note = "Funding Information: Manuscript received November 4, 1992; revised April 30, 1993. This work was supported by SRC under Contract 92-MJ-148 and ISTOiSDIO through ONR under Contract N00014-92-J-1757. The authors are with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720. IEEE Log Number 9212632.",

year = "1993",

month = dec,

doi = "10.1109/16.249472",

language = "English (US)",

volume = "40",

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journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Quader, Khandker N.

AU - Li, Chester C.

AU - Tu, Robert

AU - Rosenbaum, Elyse

AU - Ko, Ping K.

AU - Hu, Chenming

N1 - Funding Information: Manuscript received November 4, 1992; revised April 30, 1993. This work was supported by SRC under Contract 92-MJ-148 and ISTOiSDIO through ONR under Contract N00014-92-J-1757. The authors are with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720. IEEE Log Number 9212632.

PY - 1993/12

Y1 - 1993/12

N2 - In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

AB - In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

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A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

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