TY - JOUR
T1 - A backscattering model incorporating the effective carrier temperature in Nano-MOSFET
AU - Giusi, Gino
AU - Iannaccone, Giuseppe
AU - Crupi, Felice
AU - Ravaioli, Umberto
N1 - Funding Information:
Manuscript received April 5, 2011; accepted April 11, 2011. Date of publication May 23, 2011; date of current version June 29, 2011. This work was supported in part by the Seventh Framework Programme Network of Excellence Silicon-based nanostructures and nanodevices for long term microelectronics applications under Contract 216171 and in part by the Electronic Numerical Integrator and Computer Project under Grant 12003 MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits, and systems. The review of this letter was arranged by Editor X. Zhou.
PY - 2011/7
Y1 - 2011/7
N2 - In this letter, we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors, which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase in carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by high saturation current. To support our discussion, accurate 2-D full-band Monte Carlo device simulations with quantum correction have been performed in double-gate n-type metaloxidesemiconductor field-effect transistors for different geometry (gate length down to 10 nm), biases, and lattice temperatures. Including the effective carrier temperature is particularly important to properly treat the high-inversion regime, where previous backscattering models usually fail.
AB - In this letter, we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors, which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase in carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by high saturation current. To support our discussion, accurate 2-D full-band Monte Carlo device simulations with quantum correction have been performed in double-gate n-type metaloxidesemiconductor field-effect transistors for different geometry (gate length down to 10 nm), biases, and lattice temperatures. Including the effective carrier temperature is particularly important to properly treat the high-inversion regime, where previous backscattering models usually fail.
KW - Backscattering
KW - Monte Carlo (MC) device simulation
KW - carrier transport
KW - metaloxidesemiconductor field-effect transistors (MOSFETs)
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U2 - 10.1109/LED.2011.2145352
DO - 10.1109/LED.2011.2145352
M3 - Article
AN - SCOPUS:79959801635
SN - 0741-3106
VL - 32
SP - 853
EP - 855
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
M1 - 5771977
ER -