A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Solomon Assefa; Steven Shank; William Green; Marwan Khater; Edward Kiewra; Carol Reinholm; Swetha Kamlapurkar; Alexander Rylyakov; Clint Schow; Folkert Horst; Huapu Pan; Teya Topuria; Philip Rice; Douglas M. Gill; Jessie Rosenberg; Tymon Barwicz; Min Yang; Jonathan Proesel; Jens Hofrichter; Bert Offrein; Xiaoxiong Gu; Wilfried Haensch; John Ellis-Monaghan; Yurii A Vlasov

doi:10.1109/IEDM.2012.6479162

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Solomon Assefa, Steven Shank, William Green, Marwan Khater, Edward Kiewra, Carol Reinholm, Swetha Kamlapurkar, Alexander Rylyakov, Clint Schow, Folkert Horst, Huapu Pan, Teya Topuria, Philip Rice, Douglas M. Gill, Jessie Rosenberg, Tymon Barwicz, Min Yang, Jonathan Proesel, Jens Hofrichter, Bert OffreinXiaoxiong Gu, Wilfried Haensch, John Ellis-Monaghan, Yurii A Vlasov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base highperformance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs	https://doi.org/10.1109/IEDM.2012.6479162
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1109/IEDM.2012.6479162

Library availability

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Cite this

Assefa, S., Shank, S., Green, W., Khater, M., Kiewra, E., Reinholm, C., Kamlapurkar, S., Rylyakov, A., Schow, C., Horst, F., Pan, H., Topuria, T., Rice, P., Gill, D. M., Rosenberg, J., Barwicz, T., Yang, M., Proesel, J., Hofrichter, J., ... Vlasov, Y. A. (2012). A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 [6479162] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479162

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications. / Assefa, Solomon; Shank, Steven; Green, William et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. 6479162 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Assefa, S, Shank, S, Green, W, Khater, M, Kiewra, E, Reinholm, C, Kamlapurkar, S, Rylyakov, A, Schow, C, Horst, F, Pan, H, Topuria, T, Rice, P, Gill, DM, Rosenberg, J, Barwicz, T, Yang, M, Proesel, J, Hofrichter, J, Offrein, B, Gu, X, Haensch, W, Ellis-Monaghan, J & Vlasov, YA 2012, A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479162, Technical Digest - International Electron Devices Meeting, IEDM, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479162

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abstract = "The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base highperformance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.",

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AU - Reinholm, Carol

AU - Kamlapurkar, Swetha

AU - Rylyakov, Alexander

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AU - Rosenberg, Jessie

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AU - Yang, Min

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A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

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