TY - GEN
T1 - A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications
AU - Bashir, R.
AU - Chen, D.
AU - Hebert, F.
AU - Desantis, J.
AU - Ramde, A.
AU - Hobrecht, S.
AU - You, H.
AU - Maghsoudnia, P.
AU - Meng, P.
AU - Razouk, R. R.
PY - 1994
Y1 - 1994
N2 - A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.
AB - A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.
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M3 - Conference contribution
AN - SCOPUS:84907686115
T3 - European Solid-State Device Research Conference
SP - 217
EP - 220
BT - European Solid-State Device Research Conference
A2 - Ashburn, Peter
A2 - Hill, Chris
PB - IEEE Computer Society
T2 - 24th European Solid State Device Research Conference, ESSDERC 1994
Y2 - 11 September 1994 through 15 September 1994
ER -