A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications

R. Bashir, D. Chen, F. Hebert, J. Desantis, A. Ramde, S. Hobrecht, H. You, P. Maghsoudnia, P. Meng, R. R. Razouk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages217-220
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Externally publishedYes
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
Country/TerritoryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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