A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications

R. Bashir; D. Chen; F. Hebert; J. Desantis; A. Ramde; S. Hobrecht; H. You; P. Maghsoudnia; P. Meng; R. R. Razouk

A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications

R. Bashir, D. Chen, F. Hebert, J. Desantis, A. Ramde, S. Hobrecht, H. You, P. Maghsoudnia, P. Meng, R. R. Razouk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BV_ceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The f_t of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × V_a figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.

Original language	English (US)
Title of host publication	European Solid-State Device Research Conference
Editors	Peter Ashburn, Chris Hill
Publisher	IEEE Computer Society
Pages	217-220
Number of pages	4
ISBN (Electronic)	2863321579
State	Published - 1994
Externally published	Yes
Event	24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom Duration: Sep 11 1994 → Sep 15 1994

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	24th European Solid State Device Research Conference, ESSDERC 1994
Country/Territory	United Kingdom
City	Edinburgh
Period	9/11/94 → 9/15/94

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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Bashir, R., Chen, D., Hebert, F., Desantis, J., Ramde, A., Hobrecht, S., You, H., Maghsoudnia, P., Meng, P., & Razouk, R. R. (1994). A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 217-220). Article 5435705 (European Solid-State Device Research Conference). IEEE Computer Society.

A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications. / Bashir, R.; Chen, D.; Hebert, F. et al.
European Solid-State Device Research Conference. ed. / Peter Ashburn; Chris Hill. IEEE Computer Society, 1994. p. 217-220 5435705 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bashir, R, Chen, D, Hebert, F, Desantis, J, Ramde, A, Hobrecht, S, You, H, Maghsoudnia, P, Meng, P & Razouk, RR 1994, A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications. in P Ashburn & C Hill (eds), European Solid-State Device Research Conference., 5435705, European Solid-State Device Research Conference, IEEE Computer Society, pp. 217-220, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 9/11/94.

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abstract = "A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.",

author = "R. Bashir and D. Chen and F. Hebert and J. Desantis and A. Ramde and S. Hobrecht and H. You and P. Maghsoudnia and P. Meng and Razouk, {R. R.}",

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publisher = "IEEE Computer Society",

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AU - Bashir, R.

AU - Chen, D.

AU - Hebert, F.

AU - Desantis, J.

AU - Ramde, A.

AU - Hobrecht, S.

AU - You, H.

AU - Maghsoudnia, P.

AU - Meng, P.

AU - Razouk, R. R.

PY - 1994

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N2 - A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.

AB - A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, β × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.

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T2 - 24th European Solid State Device Research Conference, ESSDERC 1994

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A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications

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