A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journalArticlepeer-review


A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

Original languageEnglish (US)
Pages (from-to)586-588
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - Dec 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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