A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering