A 500 MHz carbon nanotube transistor oscillator

A. A. Pesetski; J. E. Baumgardner; S. V. Krishnaswamy; H. Zhang; J. D. Adam; C. Kocabas; T. Banks; J. A. Rogers

doi:10.1063/1.2988824

A 500 MHz carbon nanotube transistor oscillator

A. A. Pesetski, J. E. Baumgardner, S. V. Krishnaswamy, H. Zhang, J. D. Adam, C. Kocabas, T. Banks, J. A. Rogers

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.

Original language	English (US)
Article number	123506
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2988824
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2988824

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abstract = "Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.",

author = "Pesetski, {A. A.} and Baumgardner, {J. E.} and Krishnaswamy, {S. V.} and H. Zhang and Adam, {J. D.} and C. Kocabas and T. Banks and Rogers, {J. A.}",

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AU - Pesetski, A. A.

AU - Baumgardner, J. E.

AU - Krishnaswamy, S. V.

AU - Zhang, H.

AU - Adam, J. D.

AU - Kocabas, C.

AU - Banks, T.

AU - Rogers, J. A.

PY - 2008

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AB - Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.

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A 500 MHz carbon nanotube transistor oscillator

Abstract

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