A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS

Junheng Zhu, Makrand Mahalley, Guanghua Shu, Woo Seok Choi, Romesh Kumar Nandwana, Ahmed Elkholy, Bibhudatta Sahoo, Pavan Kumar Hanumolu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a novel oscillator architecture that uses a low frequency temperature stable clock generated by a low power RC relaxation oscillator to improve the temperature stability of a low noise ring oscillator. Fabricated in 65nm CMOS process, the prototype oscillator consumes 197 to 452μW across an output frequency range of 45-to-75MHz. At 70MHz, the measured period jitter is 2.3psrms with phase noise of -104dBc/Hz at 100kHz offset, which translates to an FoM of 164.6dB.

Original languageEnglish (US)
Title of host publication38th Annual Custom Integrated Circuits Conference
Subtitle of host publicationA Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509051915
DOIs
StatePublished - Jul 26 2017
Event38th Annual Custom Integrated Circuits Conference, CICC 2017 - Austin, United States
Duration: Apr 30 2017May 3 2017

Publication series

NameProceedings of the Custom Integrated Circuits Conference
Volume2017-April
ISSN (Print)0886-5930

Other

Other38th Annual Custom Integrated Circuits Conference, CICC 2017
CountryUnited States
CityAustin
Period4/30/175/3/17

Fingerprint

Jitter
Relaxation oscillators
Phase noise
Clocks
Temperature

Keywords

  • period jitter
  • phase noise
  • relaxation oscillator
  • ring oscillator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zhu, J., Mahalley, M., Shu, G., Choi, W. S., Nandwana, R. K., Elkholy, A., ... Hanumolu, P. K. (2017). A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS. In 38th Annual Custom Integrated Circuits Conference: A Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017 [7993679] (Proceedings of the Custom Integrated Circuits Conference; Vol. 2017-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2017.7993679

A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS. / Zhu, Junheng; Mahalley, Makrand; Shu, Guanghua; Choi, Woo Seok; Nandwana, Romesh Kumar; Elkholy, Ahmed; Sahoo, Bibhudatta; Hanumolu, Pavan Kumar.

38th Annual Custom Integrated Circuits Conference: A Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7993679 (Proceedings of the Custom Integrated Circuits Conference; Vol. 2017-April).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhu, J, Mahalley, M, Shu, G, Choi, WS, Nandwana, RK, Elkholy, A, Sahoo, B & Hanumolu, PK 2017, A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS. in 38th Annual Custom Integrated Circuits Conference: A Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017., 7993679, Proceedings of the Custom Integrated Circuits Conference, vol. 2017-April, Institute of Electrical and Electronics Engineers Inc., 38th Annual Custom Integrated Circuits Conference, CICC 2017, Austin, United States, 4/30/17. https://doi.org/10.1109/CICC.2017.7993679
Zhu J, Mahalley M, Shu G, Choi WS, Nandwana RK, Elkholy A et al. A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS. In 38th Annual Custom Integrated Circuits Conference: A Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7993679. (Proceedings of the Custom Integrated Circuits Conference). https://doi.org/10.1109/CICC.2017.7993679
Zhu, Junheng ; Mahalley, Makrand ; Shu, Guanghua ; Choi, Woo Seok ; Nandwana, Romesh Kumar ; Elkholy, Ahmed ; Sahoo, Bibhudatta ; Hanumolu, Pavan Kumar. / A 45-75MHz 197-452μW oscillator with 164.6dB FoM and 2.3psrms period jitter in 65nm CMOS. 38th Annual Custom Integrated Circuits Conference: A Showcase for Integrated Circuit Design in Silicon Hills, CICC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (Proceedings of the Custom Integrated Circuits Conference).
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abstract = "This paper presents a novel oscillator architecture that uses a low frequency temperature stable clock generated by a low power RC relaxation oscillator to improve the temperature stability of a low noise ring oscillator. Fabricated in 65nm CMOS process, the prototype oscillator consumes 197 to 452μW across an output frequency range of 45-to-75MHz. At 70MHz, the measured period jitter is 2.3psrms with phase noise of -104dBc/Hz at 100kHz offset, which translates to an FoM of 164.6dB.",
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AB - This paper presents a novel oscillator architecture that uses a low frequency temperature stable clock generated by a low power RC relaxation oscillator to improve the temperature stability of a low noise ring oscillator. Fabricated in 65nm CMOS process, the prototype oscillator consumes 197 to 452μW across an output frequency range of 45-to-75MHz. At 70MHz, the measured period jitter is 2.3psrms with phase noise of -104dBc/Hz at 100kHz offset, which translates to an FoM of 164.6dB.

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