High frequency bands such as LTE band 42 and band 43 require resonators and filters that can operate at frequencies higher than 3 GHz. However, existing lithium niobate fundamental symmetric (S0) lamb mode resonators and surface acoustic wave (SAW) resonators have operating frequency limitations (<2 GHz) due to their low phase velocities. High frequency AlN film bulk acoustic resonators (FBARs) suffer from the deteriorated crystallization and power handling issues due to the thin AlN film. High frequency AlN S0 lamb mode resonators encounter lithography and power handling challenges because of their narrow pitch. The first-order symmetric (S1) lamb mode in AlN shows a very high phase velocity and is promising in building high frequency resonators and filters. This work thoroughly investigates the S1 lamb mode resonator and extends its application to high frequency RF filters with a hybrid topology.