A 3.5 GHz AlN S1 lamb mode resonator

Anming Gao, Jie Zou, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

Original languageEnglish (US)
Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781538633830
DOIs
StatePublished - Oct 31 2017
Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
Duration: Sep 6 2017Sep 9 2017

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2017 IEEE International Ultrasonics Symposium, IUS 2017
CountryUnited States
CityWashington
Period9/6/179/9/17

Keywords

  • Aluminum nitride (AlN)
  • Microelectromechanical system (MEMS)
  • Resonator
  • S0 Lamb mode
  • S1 Lamb mode

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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  • Cite this

    Gao, A., Zou, J., & Gong, S. (2017). A 3.5 GHz AlN S1 lamb mode resonator. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092161] (IEEE International Ultrasonics Symposium, IUS). IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092161