A 3.5 GHz AlN S1 lamb mode resonator

Anming Gao; Jie Zou; Songbin Gong

doi:10.1109/ULTSYM.2017.8092161

A 3.5 GHz AlN S1 lamb mode resonator

Anming Gao, Jie Zou, Songbin Gong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when h_AlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (k_t²) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • k_t² • Q, of 69.1.

Original language	English (US)
Title of host publication	2017 IEEE International Ultrasonics Symposium, IUS 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538633830
DOIs	https://doi.org/10.1109/ULTSYM.2017.8092161
State	Published - Oct 31 2017
Event	2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: Sep 6 2017 → Sep 9 2017

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Other

Other	2017 IEEE International Ultrasonics Symposium, IUS 2017
Country/Territory	United States
City	Washington
Period	9/6/17 → 9/9/17

Keywords

Aluminum nitride (AlN)
Microelectromechanical system (MEMS)
Resonator
S0 Lamb mode
S1 Lamb mode

ASJC Scopus subject areas

Acoustics and Ultrasonics

Online availability

10.1109/ULTSYM.2017.8092161

Library availability

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Cite this

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title = "A 3.5 GHz AlN S1 lamb mode resonator",

abstract = "This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.",

keywords = "Aluminum nitride (AlN), Microelectromechanical system (MEMS), Resonator, S0 Lamb mode, S1 Lamb mode",

author = "Anming Gao and Jie Zou and Songbin Gong",

year = "2017",

month = oct,

day = "31",

doi = "10.1109/ULTSYM.2017.8092161",

language = "English (US)",

series = "IEEE International Ultrasonics Symposium, IUS",

publisher = "IEEE Computer Society",

booktitle = "2017 IEEE International Ultrasonics Symposium, IUS 2017",

note = "2017 IEEE International Ultrasonics Symposium, IUS 2017 ; Conference date: 06-09-2017 Through 09-09-2017",

}

TY - GEN

T1 - A 3.5 GHz AlN S1 lamb mode resonator

AU - Gao, Anming

AU - Zou, Jie

AU - Gong, Songbin

PY - 2017/10/31

Y1 - 2017/10/31

N2 - This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

AB - This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

KW - Aluminum nitride (AlN)

KW - Microelectromechanical system (MEMS)

KW - Resonator

KW - S0 Lamb mode

KW - S1 Lamb mode

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DO - 10.1109/ULTSYM.2017.8092161

M3 - Conference contribution

AN - SCOPUS:85039439700

T3 - IEEE International Ultrasonics Symposium, IUS

BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017

PB - IEEE Computer Society

T2 - 2017 IEEE International Ultrasonics Symposium, IUS 2017

Y2 - 6 September 2017 through 9 September 2017

ER -

A 3.5 GHz AlN S1 lamb mode resonator

Abstract

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Keywords

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