A 3.5 GHz AlN S1 lamb mode resonator

Anming Gao, Jie Zou, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

Original languageEnglish (US)
Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781538633830
DOIs
StatePublished - Oct 31 2017
Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
Duration: Sep 6 2017Sep 9 2017

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2017 IEEE International Ultrasonics Symposium, IUS 2017
CountryUnited States
CityWashington
Period9/6/179/9/17

Fingerprint

aluminum nitrides
phase velocity
resonators
microelectromechanical systems
products
thin films
simulation

Keywords

  • Aluminum nitride (AlN)
  • Microelectromechanical system (MEMS)
  • Resonator
  • S0 Lamb mode
  • S1 Lamb mode

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Gao, A., Zou, J., & Gong, S. (2017). A 3.5 GHz AlN S1 lamb mode resonator. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092161] (IEEE International Ultrasonics Symposium, IUS). IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092161

A 3.5 GHz AlN S1 lamb mode resonator. / Gao, Anming; Zou, Jie; Gong, Songbin.

2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092161 (IEEE International Ultrasonics Symposium, IUS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gao, A, Zou, J & Gong, S 2017, A 3.5 GHz AlN S1 lamb mode resonator. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092161, IEEE International Ultrasonics Symposium, IUS, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 9/6/17. https://doi.org/10.1109/ULTSYM.2017.8092161
Gao A, Zou J, Gong S. A 3.5 GHz AlN S1 lamb mode resonator. In 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society. 2017. 8092161. (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2017.8092161
Gao, Anming ; Zou, Jie ; Gong, Songbin. / A 3.5 GHz AlN S1 lamb mode resonator. 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. (IEEE International Ultrasonics Symposium, IUS).
@inproceedings{93e20004ab004157992dd57f12a7dc87,
title = "A 3.5 GHz AlN S1 lamb mode resonator",
abstract = "This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6{\%} for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59{\%}. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.",
keywords = "Aluminum nitride (AlN), Microelectromechanical system (MEMS), Resonator, S0 Lamb mode, S1 Lamb mode",
author = "Anming Gao and Jie Zou and Songbin Gong",
year = "2017",
month = "10",
day = "31",
doi = "10.1109/ULTSYM.2017.8092161",
language = "English (US)",
series = "IEEE International Ultrasonics Symposium, IUS",
publisher = "IEEE Computer Society",
booktitle = "2017 IEEE International Ultrasonics Symposium, IUS 2017",

}

TY - GEN

T1 - A 3.5 GHz AlN S1 lamb mode resonator

AU - Gao, Anming

AU - Zou, Jie

AU - Gong, Songbin

PY - 2017/10/31

Y1 - 2017/10/31

N2 - This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

AB - This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation, the fabricated resonator demonstrates a high frequency resonance at 3.5 GHz and a large electromechanical coupling (kt2) of 3.59%. Among the demonstrated S1 mode deviecs, this work has achieved the highest product of merit, f • kt2 • Q, of 69.1.

KW - Aluminum nitride (AlN)

KW - Microelectromechanical system (MEMS)

KW - Resonator

KW - S0 Lamb mode

KW - S1 Lamb mode

UR - http://www.scopus.com/inward/record.url?scp=85039439700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85039439700&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2017.8092161

DO - 10.1109/ULTSYM.2017.8092161

M3 - Conference contribution

AN - SCOPUS:85039439700

T3 - IEEE International Ultrasonics Symposium, IUS

BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017

PB - IEEE Computer Society

ER -