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A 256-Kb dual-V CC SRAM building block in 65-nm CMOS process with actively clamped sleep transistor
Muhammad Khellah, Dinesh Somasekhar, Yibin Ye, Nam Sung Kim, Jason Howard, Greg Ruhl, Murad Sunna, James Tschanz, Nitin Borkar, Fatih Hamzaoglu, Gunjan Pandya, Ali Farhang, Kevin Zhang, Vivek De
Research output: Contribution to journal › Article › peer-review