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A 256-Kb dual-V CC SRAM building block in 65-nm CMOS process with actively clamped sleep transistor

  • Muhammad Khellah
  • , Dinesh Somasekhar
  • , Yibin Ye
  • , Nam Sung Kim
  • , Jason Howard
  • , Greg Ruhl
  • , Murad Sunna
  • , James Tschanz
  • , Nitin Borkar
  • , Fatih Hamzaoglu
  • , Gunjan Pandya
  • , Ali Farhang
  • , Kevin Zhang
  • , Vivek De

Research output: Contribution to journal › Article › peer-review

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