A 25 Gbps silicon microring modulator based on an interleaved junction

J. C. Rosenberg; W. M.J. Green; S. Assefa; D. M. Gill; T. Barwicz; M. Yang; S. M. Shank; Y. A. Vlasov

doi:10.1364/OE.20.026411

A 25 Gbps silicon microring modulator based on an interleaved junction

J. C. Rosenberg, W. M.J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, Y. A. Vlasov

Research output: Contribution to journal › Article › peer-review

Abstract

A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V_πL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

Original language	English (US)
Pages (from-to)	26411-26423
Number of pages	13
Journal	Optics Express
Volume	20
Issue number	24
DOIs	https://doi.org/10.1364/OE.20.026411
State	Published - Nov 19 2012
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.20.026411

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abstract = "A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.",

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AU - Rosenberg, J. C.

AU - Green, W. M.J.

AU - Assefa, S.

AU - Gill, D. M.

AU - Barwicz, T.

AU - Yang, M.

AU - Shank, S. M.

AU - Vlasov, Y. A.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

AB - A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

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A 25 Gbps silicon microring modulator based on an interleaved junction

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