A 25 Gbps silicon microring modulator based on an interleaved junction

J. C. Rosenberg, W. M.J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, Yurii A Vlasov

Research output: Contribution to journalArticle


A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

Original languageEnglish (US)
Pages (from-to)26411-26423
Number of pages13
JournalOptics Express
Issue number24
StatePublished - Nov 19 2012
Externally publishedYes


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Rosenberg, J. C., Green, W. M. J., Assefa, S., Gill, D. M., Barwicz, T., Yang, M., Shank, S. M., & Vlasov, Y. A. (2012). A 25 Gbps silicon microring modulator based on an interleaved junction. Optics Express, 20(24), 26411-26423. https://doi.org/10.1364/OE.20.026411