A 25 Gbps silicon microring modulator based on an interleaved junction

J. C. Rosenberg, W. M.J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, Y. A. Vlasov

Research output: Contribution to journalArticlepeer-review

Abstract

A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum offresonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

Original languageEnglish (US)
Pages (from-to)26411-26423
Number of pages13
JournalOptics Express
Volume20
Issue number24
DOIs
StatePublished - Nov 19 2012
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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