A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Steve G. Bandy; Clifford K. Nishimoto; Cindy Yuen; Ross A. Larue; Mary Day; Jim Eckstein; Zoilo C.H. Tan; Christopher Webb; George A. Zdasiuk

doi:10.1109/TMTT.1987.1133880

A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Steve G. Bandy, Clifford K. Nishimoto, Cindy Yuen, Ross A. Larue, Mary Day, Jim Eckstein, Zoilo C.H. Tan, Christopher Webb, George A. Zdasiuk

Research output: Contribution to journal › Article › peer-review

Abstract

A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

Original language	English (US)
Pages (from-to)	1494-1500
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.1987.1133880
State	Published - Dec 1987
Externally published	Yes

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.1987.1133880

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abstract = "A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.",

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AU - Nishimoto, Clifford K.

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AU - Larue, Ross A.

AU - Day, Mary

AU - Eckstein, Jim

AU - Tan, Zoilo C.H.

AU - Webb, Christopher

AU - Zdasiuk, George A.

PY - 1987/12

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AB - A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

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A 2–20 GHz high-gain monolithic HEMT distributed amplifier

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