A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - Dec 1987|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering