A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Steve G. Bandy, Clifford K. Nishimoto, Cindy Yuen, Ross A. Larue, Mary Day, Jim Eckstein, Zoilo C.H. Tan, Christopher Webb, George A. Zdasiuk

Research output: Contribution to journalArticle

Abstract

A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

Original languageEnglish (US)
Pages (from-to)1494-1500
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume35
Issue number12
DOIs
StatePublished - Dec 1987
Externally publishedYes

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ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Bandy, S. G., Nishimoto, C. K., Yuen, C., Larue, R. A., Day, M., Eckstein, J., Tan, Z. C. H., Webb, C., & Zdasiuk, G. A. (1987). A 2–20 GHz high-gain monolithic HEMT distributed amplifier. IEEE Transactions on Microwave Theory and Techniques, 35(12), 1494-1500. https://doi.org/10.1109/TMTT.1987.1133880