A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Steve G. Bandy; Clifford K. Nishimoto; Cindy Yuen; Ross A. Larue; Mary Day; Jim Eckstein; Zoilo C.H. Tan; Christopher Webb; George A. Zdasiuk

doi:10.1109/TMTT.1987.1133880

A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Steve G. Bandy, Clifford K. Nishimoto, Cindy Yuen, Ross A. Larue, Mary Day, Jim Eckstein, Zoilo C.H. Tan, Christopher Webb, George A. Zdasiuk

Research output: Contribution to journal › Article › peer-review

Abstract

A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

Original language	English (US)
Pages (from-to)	1494-1500
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.1987.1133880
State	Published - Dec 1987
Externally published	Yes

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/TMTT.1987.1133880

Library availability

Discover UIUC Full Text

Cite this

@article{e7d6b56d86194beb999eeaad6aa321c7,

title = "A 2–20 GHz high-gain monolithic HEMT distributed amplifier",

abstract = "A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.",

author = "Bandy, {Steve G.} and Nishimoto, {Clifford K.} and Cindy Yuen and Larue, {Ross A.} and Mary Day and Jim Eckstein and Tan, {Zoilo C.H.} and Christopher Webb and Zdasiuk, {George A.}",

year = "1987",

month = dec,

doi = "10.1109/TMTT.1987.1133880",

language = "English (US)",

volume = "35",

pages = "1494--1500",

journal = "IRE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A 2–20 GHz high-gain monolithic HEMT distributed amplifier

AU - Bandy, Steve G.

AU - Nishimoto, Clifford K.

AU - Yuen, Cindy

AU - Larue, Ross A.

AU - Day, Mary

AU - Eckstein, Jim

AU - Tan, Zoilo C.H.

AU - Webb, Christopher

AU - Zdasiuk, George A.

PY - 1987/12

Y1 - 1987/12

N2 - A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

AB - A low-noise 2–21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12±0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved midband (4–12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0.35-µm-gate-length MESFET's in place of the HEMT devices resulted in 9.5±0.5 dB of gain across the 2–20 GHz band. This record performance level for a MESFET distributed amplifier is used to determine that the use of HEMT devices rather than the small gate lengths is primarily responsible for the HEMT amplifier performance.

UR - http://www.scopus.com/inward/record.url?scp=84993711441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84993711441&partnerID=8YFLogxK

U2 - 10.1109/TMTT.1987.1133880

DO - 10.1109/TMTT.1987.1133880

M3 - Article

AN - SCOPUS:84993711441

SN - 0018-9480

VL - 35

SP - 1494

EP - 1500

JO - IRE Transactions on Microwave Theory and Techniques

JF - IRE Transactions on Microwave Theory and Techniques

IS - 12

ER -

A 2–20 GHz high-gain monolithic HEMT distributed amplifier

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this