TY - GEN
T1 - A 1.65 GHz Lithium Niobate A1 Resonator with Electromechanical Coupling of 14% and Q of 3112
AU - Yang, Yansong
AU - Lu, Ruochen
AU - Gong, Songbin
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - This paper reports on the demonstration of a 1.65 GHz A1 mode lithium niobate resonator with a high electromechanical coupling ({k-{t}}^{2}) of 14%, a high-quality factor (Q) of 3112, and a near spurious-free response. The 1.65 GHz resonance has been achieved by exploiting the high phase velocity of the first-order antisymmetric (A1) Lamb wave mode in a Y-cut lithium niobate (LiNbO3) thin film, while spurious mode suppression is accomplished with electrode optimization. The performance demonstrated herein marks the first time that a new resonator technology outperforms surface acoustic wave (SAW) resonators and thin-film bulk acoustic resonators (FBARs) regarding the figure of merit (FoM) in the 1-6 GHz frequency range. Thus, the A1 mode lithium niobate resonator in this work promises a new platform for the fifth-generation (5G) front-end filtering.
AB - This paper reports on the demonstration of a 1.65 GHz A1 mode lithium niobate resonator with a high electromechanical coupling ({k-{t}}^{2}) of 14%, a high-quality factor (Q) of 3112, and a near spurious-free response. The 1.65 GHz resonance has been achieved by exploiting the high phase velocity of the first-order antisymmetric (A1) Lamb wave mode in a Y-cut lithium niobate (LiNbO3) thin film, while spurious mode suppression is accomplished with electrode optimization. The performance demonstrated herein marks the first time that a new resonator technology outperforms surface acoustic wave (SAW) resonators and thin-film bulk acoustic resonators (FBARs) regarding the figure of merit (FoM) in the 1-6 GHz frequency range. Thus, the A1 mode lithium niobate resonator in this work promises a new platform for the fifth-generation (5G) front-end filtering.
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U2 - 10.1109/MEMSYS.2019.8870796
DO - 10.1109/MEMSYS.2019.8870796
M3 - Conference contribution
AN - SCOPUS:85070345342
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 875
EP - 878
BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
Y2 - 27 January 2019 through 31 January 2019
ER -